IndiumV3, Chine, Analysis, bibRecord, 000325

An optimized In-CuGa metallic precursors for chalcopyrite thin films

Identifieur interne : 000325 ( Chine/Analysis ); précédent : 000324; suivant : 000326

An optimized In-CuGa metallic precursors for chalcopyrite thin films

Auteurs : RBID : Pascal:13-0350353

Descripteurs français

Pascal (Inist)
- Précurseur, Chalcopyrite, Couche mince, Dépôt pulvérisation, Point fusion, Indium, Pulvérisation irradiation, Couche multimoléculaire, Recuit, Diffusion(transport), Alliage(action), Cuivre, Gallium, Séléniure, Multicouche, Microscopie électronique balayage, Microscopie RX, Diffraction RX, Spectrométrie Raman, Substrat indium, 8115C, 6835F, 6855J.
Wicri :
- concept : Cuivre.

English descriptors

KwdEn :
- Alloying, Annealing, Chalcopyrite, Copper, Diffusion, Gallium, Indium, Melting points, Multilayer, Multilayers, Precursor, Raman spectroscopy, Scanning electron microscopy, Selenides, Sputter deposition, Sputtering, Thin films, X-ray microscopy, XRD.

Abstract

We report a study of CuGa-In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film.

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Links to Exploration step

Pascal:13-0350353

Le document en format XML

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<author><name sortKey="Han, Jun Feng" uniqKey="Han J">Jun-Feng Han</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
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<country>France</country>
<placeName><region type="region" nuts="2">Pays de la Loire</region>
<settlement type="city">Nantes</settlement>
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<orgName type="university">Université de Nantes</orgName>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University</s1>
<s2>Beijing 100871</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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<author><name>LIAO CHENG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University</s1>
<s2>Beijing 100871</s2>
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<author><name>JIANG TAO</name>
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<author><name sortKey="Xie, Hua Mu" uniqKey="Xie H">Hua-Mu Xie</name>
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<author><name>ZHAO KUI</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University</s1>
<s2>Beijing 100871</s2>
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<author><name sortKey="Besland, M P" uniqKey="Besland M">M.-P. Besland</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229</s1>
<s2>44322 Nantes</s2>
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<country>France</country>
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<settlement type="city">Nantes</settlement>
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<orgName type="university">Université de Nantes</orgName>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alloying</term>
<term>Annealing</term>
<term>Chalcopyrite</term>
<term>Copper</term>
<term>Diffusion</term>
<term>Gallium</term>
<term>Indium</term>
<term>Melting points</term>
<term>Multilayer</term>
<term>Multilayers</term>
<term>Precursor</term>
<term>Raman spectroscopy</term>
<term>Scanning electron microscopy</term>
<term>Selenides</term>
<term>Sputter deposition</term>
<term>Sputtering</term>
<term>Thin films</term>
<term>X-ray microscopy</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Précurseur</term>
<term>Chalcopyrite</term>
<term>Couche mince</term>
<term>Dépôt pulvérisation</term>
<term>Point fusion</term>
<term>Indium</term>
<term>Pulvérisation irradiation</term>
<term>Couche multimoléculaire</term>
<term>Recuit</term>
<term>Diffusion(transport)</term>
<term>Alliage(action)</term>
<term>Cuivre</term>
<term>Gallium</term>
<term>Séléniure</term>
<term>Multicouche</term>
<term>Microscopie électronique balayage</term>
<term>Microscopie RX</term>
<term>Diffraction RX</term>
<term>Spectrométrie Raman</term>
<term>Substrat indium</term>
<term>8115C</term>
<term>6835F</term>
<term>6855J</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
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<front><div type="abstract" xml:lang="en">We report a study of CuGa-In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film.</div>
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<fA11 i1="01" i2="1"><s1>HAN (Jun-Feng)</s1>
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<fA11 i1="02" i2="1"><s1>LIAO CHENG</s1>
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<fC01 i1="01" l="ENG"><s0>We report a study of CuGa-In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film.</s0>
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An optimized In-CuGa metallic precursors for chalcopyrite thin films

An optimized In-CuGa metallic precursors for chalcopyrite thin films

Descripteurs français

English descriptors

Abstract

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